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Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
Features *Low Phase Noise Oscillator Transistor *200 mW Driv er Amplifier Transistor *Operation to 8 GHz *Av ailable as Chip *Av ailable in Hermetic Surface Mount Packages Description The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB. This industry standard transistor is av ailable as a chip for hybrid oscillator circuits or in hermetic ceramic packages for military usage. The chip and hermetic packages may be screened to JANTXV equiv alent lev els. The MP4T243 transistors utilize sub-micron photolithography and locos oxidation techniques to minimize parasitic capacitances. It also reduces shot noise enabling improv ed low noise characteristics. These transistors use a high temperature refractory barrier/gold metalization process. The MP4T243 transistor is emitter ballasted using ion implanted polysilicon resistors to prev ent emitter current hot spots at high current operation.
MP4T243 Series
V3.00
Case Styles
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
Absolute Maximum Ratings @ 25 C
MP4T24300 Parameter Collector-Base Voltage Emitter-Base Voltage Collector Current
1 1 1 1
MP4T243 Series
V3.00
MP4T24335 Micro-X 25 12 1.5 110 200 -65 to +200 400 150
Symbol VCBO VCEO VEBO IC Tj T STG PT
2
Unit Volts Volts Volts mA C C mW C
Chip 25 12 1.5 110 200 -65 to +200 1000 150
Collector-Emitter Voltage
Junction Temperature Storage Temperature Power Dissipation
1,3
Operating Temperature
T CP
1. At 25 case temperature (packaged transistors) or 25 mounting surface temperature (chip transistors). C C 2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature. 3. The thermal resistance of the MP4T24300 junction/case is 50 C/watt nominal.
Electrical Specifications @ 25 C
MP4T24300 Parameter Gain Bandwidth Product Insertion Power Gain Condition VCE = 12 volts I C = 40 mA VCE = 12 volts I C = 40 mA f = 1 GHz f = 2 GHz VCE = 12 volts I C = 20 mA f = 1 GHz VCE = 12 volts I C = 40 mA f = 2 GHz VCE = 12 volts I C = 40 mA f = 2 GHz VCE = 12 volts I C = 40 mA f = 1 GHz f = 2 GHz Symbol fT |S21E|2 Units GHz dB 12 min 8 typ NF dB 3 typ GTU (max) aB 11 typ MAG dB 15 typ P1dB dBm 24 typ 22 typ 24 typ 22 typ 15 typ 10.5 typ 3 typ 11 min 8 typ Chip 7 typ MP4T24335 Micro-X 7 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Power Out at 1 dB Compression
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Electrical Specifications @ 25 C
Parameter Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector Base Junction Capacitance Condition VCB = 15 volts I E = 0 A VEB = 1 volt I C = 0 A VCE = 8 volts I C = 50 mA VCB = 10 volts I E = 0 A f = 1 MHz Symbol I CBO I EBO hFE CCB Min 20 Typical 90 0.60
MP4T243 Series
V2.00
Max 10 1 250 0.08
Units A A pF
Typical Scattering Parameters in the MIcro-X Package MP4T24335 VCE = 12 Volts, IC = 10 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 S11E Mag. 0.598 0.612 0.549 0.709 0.794 0.899 1.013 1.108 1.161 1.161 1.161 Angle -157 177 153 133 115 96 75 53 30 13 13 Mag. 3.610 2.373 1.658 1.355 1.182 1.063 0.973 0.878 0.773 0.677 0.677 S21E Angle 84.4 64.6 44.2 26.1 9.1 -7.4 -24.0 -41.0 -58.8 -73.2 -73.2 Mag. 0.114 0.127 0.146 0.173 0.207 0.246 0.296 0.360 0.438 0.500 0.500 S12E Angle 27.6 27.3 29.4 30.9 30.2 27.1 21.5 13.4 2.5 9.2 9.4 Mag 0.378 0.286 0.253 0.269 0.314 0.367 0.439 0.559 0.757 0.949 0.949 S22E Angle -73.4 -90.7 -113.2 -138.5 -162.2 170.8 157.0 135.6 116.4 103.4 103.6
VCE = 12 Volts, IC = 20 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 S11E Mag. 0.574 0.591 0.635 0.696 0.788 0.890 1.018 1.106 1.165 1.147 1.147 Angle -153 170 147 128 110 51 72 50 27 6 6 Mag. 4.510 2.433 1.777 1.465 1.298 1.180 1.090 1.000 0.875 0.723 0.723 S21E Angle 90.3 64.3 45.3 27.5 11.1 -5.3 -23.1 -40.9 -60.0 -79.5 -79.5 Mag. 0.103 0.126 0.150 0.181 0.215 0.246 0.285 0.347 0.399 0.485 0.485 S12E Angle 32.1 30.1 32.9 32.1 29.4 25.8 19.6 12.1 6.3 13.5 13.5 Mag 0.330 0.239 0.205 0.217 0.262 0.301 0.366 0.457 0.625 0.847 0.847 S22E Angle -78.0 -100.4 -126.2 -151.3 -169.0 -167.7 156.2 134.3 115.1 101.7 101.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
Typical Scattering Parameters in the MIcro-X Package MP4T24335 ( Continued )
MP4T243 Series
V3.00
VCE = 12 Volts, IC = 40 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 S11E Mag. 0.571 0.603 0.650 0.701 0.788 0.879 0.982 1.057 1.101 1.097 Angle -164 166 141 123 104 86 66 46 25 5 Mag. 4.410 2.533 1.875 1.485 1.305 1.163 1.065 0.932 0.815 0.675 S21E Angle 88.2 65.6 44.5 27.0 10.2 -6.0 -23.1 -40.8 -57.8 -76.6 Mag. 0.092 0.118 0.146 0.178 0.210 0.247 0.290 0.333 0.389 0.450 S12E Angle 35.3 35.2 35.2 33.4 31.2 26.3 21.4 14.6 5.8 -8.5 Mag 0.282 0.196 0.176 0.183 0.216 0.255 0.317 0.391 0.502 0.656 S22E Angle -83.2 -105.6 -127.1 -147.4 -169.0 171.8 153.6 135.8 116.6 96.7
VCE = 12 Volts, IC = 60 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 S11E Mag. 0.577 0.608 0.652 0.701 0.786 0.874 0.972 1.045 1.086 1.084 Angle -168 165 140 123 105 86 67 46 25 7 Mag. 4.055 2.330 1.728 1.382 1.215 1.085 0.990 0.873 0.760 0.638 S21E Angle 86.4 64.7 44.4 27.1 10.6 -5.6 -22.0 -39.4 -55.6 -73.3 Mag. 0.084 0.111 0.140 0.171 0.204 0.242 0.288 0.334 0.394 0.462 S12E Angle 35.1 37.7 38.0 36.5 34.6 29.8 5.0 18.1 9.7 -4.7 Mag 0.268 0.200 0.185 0.192 0.218 0.254 0.320 0.396 0.508 0.668 S22E Angle -72.9 -88.8 -108.3 -127.9 -147.4 -160.4 -161.7 -145.7 125.8 105.7
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Typical Performance Curves
MP4T243 Series
V2.00
DC SAFE OPERATING RANGE AT 25 C
200 COLLECTOR CURRENT (mA) 160 140 120 100 80 60 40 20 0 2 4 6 8 10 12 14 COLLECTOR EMITTER VOLTAGE (Volts)
MP4T24335 Micro-X
POWER DERATING CURVES
1000 900 TOTAL POWER DISSIPATION (mW) 800 700 600 500 400 300 200 100 0 -25 0 25 50 75 100 125 150 175 200 AMBIENT TEMP (C)
MP4T24335 Micro-X MP4T24300 Chip on 25C Heat Sink
180
MP4T24300 Chip on 25C Heat Sink
NOMINAL COLLECTOR-BASE CAPACITANCE vs COLLECTOR-BASE VOLTAGE (MP4T24335)
1 COLLECTOR-BASE CAPACITANCE (pF) 0.9 0.8
NOMINAL GAIN vs FREQUENCY at VCE = 12 Volts and IC = 20 mA (MA4T24335)
16 14 12
GTU (MAX)
GAIN (dB)
10 8 6 4 2 |S21|2
0.7 0.6 0.5 0.4 1 10 COLLECTOR-BASE VOLTAGE (Volts) 100
0 1 FREQUENCY (GHz) 10
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
MP4T243 Series
V3.00
Typical Performance Curves (Cont' d)
NOMINAL GAIN BANDWIDTH PRODUCT (fT) vs COLLECTOR CURRENT at VCE = 8 and 12 VOLTS (MP4T24335)
8 7 GAIN BANDWIDTH PRODUCT in GHz
MAG
NOMINAL GAIN vs COLLECTOR CURRENT at F = 2 GHz and VCE = 12 VOLTS (MP4T24335)
16 14 12 GAIN (dB) 10 8 6 |S21E |2 4 2 0 1 10 COLLECTOR CURRENT (mA) 100
GTU (MAX)
6 5 4 3 2 1 1
12 VOLTS
8 VOLTS
10 COLLECTOR CURRENT (mA)
100
NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 8 VOLTS (MP4T24335)
ASSOCIATD GAIN (dB) 120 110 DC CURRENT GAIN 100 90 80 70 60 50 0 20 40 60 80 100 COLLECTOR CURRENT (mA)
NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs COLLECTOR CURRENT at 1 GHz and VCE = 12 VOLTS (MP4T24335)
18 16 14 12 10 8 6 4 2 0 1 10 COLLECTOR CURRENT (mA) 100 NOISE FIGURE ASSOCIATED GAIN
NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at F = 1 and 2 GHz, VCE = 8 VOLTS (MP4T24335)
40 35 30 P1dB (dBm) 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 50 55 COLLECTOR CURRENT (mA) 2 GHz 1 GHz
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
NOISE FIGURE(dB)
6
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Case Styles Chip MP4T24300
A
MP4T243 Series
V2.00
MP4T24300
Base
B
C
DIM. A B C D (Dia.) E (Chip Thickness)
INCHES 0.013 0.013 0.007 0.002 0.0045
MILLIMETERS 0.325 0.325 0.18 0.030 0.114
D
Emitter
Micro-X
MP4T24335
Emitter F 4 PLCS. E H
MP4T24335
DIM. A B C D E F G H INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45 MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45
Collector B
Base
Emitter
A C
G
D
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
7
Tel (408) 432-1480
Fax (408)) 432-3440

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